BYC60W-600PQ

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WeEn Semiconductors

DIODE GEN PURP 600V 60A TO247-2

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WeEn Semiconductors

DIODE GEN PURP 600V 60A TO247-2

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General part information

Diode 600 V 60A Through Hole TO-247-2

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Specification	BYC60W-600PQ	BYC60 Series

Current - Average Rectified (Io)	60 A	60 A
Current - Reverse Leakage @ Vr	10 µA	10 - 250 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction	-	175 °C
Operating Temperature - Junction [Max]	175 °C	175 °C
Package / Case	TO-247-2	TO-247-2
Reverse Recovery Time (trr)	50 ns	50 - 96 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	TO-247-2	TO-247-2
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	1.2 - 600 kV
Voltage - Forward (Vf) (Max) @ If	2.6 V	2.6 - 3.3 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction	Technology	Operating Temperature - Junction [Max]
WeEn Semiconductors BYC60W-1200PQ	TO-247-2	250 µA	TO-247-2	Through Hole	60 A	96 ns	200 mA, 500 ns	1.2 kV	3.3 V	175 °C	Standard
WeEn Semiconductors BYC60W-600PQ	TO-247-2	10 µA	TO-247-2	Through Hole	60 A	50 ns	200 mA, 500 ns	600 V	2.6 V		Standard	175 °C