IXFH40N30

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IXYS

MOSFET N-CH 300V 40A TO247AD

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IXYS

MOSFET N-CH 300V 40A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH40N30

Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	4800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Vgs(th) (Max) @ Id [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package
IXYS IXFH40N30	4 V	N-Channel	10 V	TO-247-3	MOSFET (Metal Oxide)	4800 pF	-55 °C	150 °C	85 mOhm	20 V	200 nC	300 W	Through Hole	300 V	TO-247AD (IXFH)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 300 V 40A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

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