IGT40R070D1E8220ATMA1

Obsolete

Infineon Technologies

GAN N-CH 400V 31A HSOF-8-3

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Obsolete

Infineon Technologies

GAN N-CH 400V 31A HSOF-8-3

Technical Specifications

Parameters and characteristics for this part

Specification	IGT40R070D1E8220ATMA1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	400 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	382 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	0 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	125 W
Supplier Device Package	PG-HSOF-8-3
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.6 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Infineon Technologies IGT40R070D1E8220ATMA1	10 V	0 °C	150 °C	N-Channel	Surface Mount	31 A	382 pF	8-PowerSFN	PG-HSOF-8-3	GaNFET (Gallium Nitride)	1.6 V	400 V	125 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 400 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3

Technical documentation and resources

No documents available