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BSZ180P03NS3EGATMA1 - INFINEON IPG20N10S4L35AATMA1

BSZ180P03NS3EGATMA1

Active
Infineon Technologies

OPTIMOS™ P-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 18 MOHM;

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BSZ180P03NS3EGATMA1 - INFINEON IPG20N10S4L35AATMA1

BSZ180P03NS3EGATMA1

Active
Infineon Technologies

OPTIMOS™ P-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 18 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ180P03NS3EGATMA1
Current - Continuous Drain (Id) @ 25°C39.5 A, 9 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds2220 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.1 W, 40 W
Rds On (Max) @ Id, Vgs [Max]18 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.67
10$ 0.58
100$ 0.40
500$ 0.33
1000$ 0.29
2000$ 0.25
Digi-Reel® 1$ 0.67
10$ 0.58
100$ 0.40
500$ 0.33
1000$ 0.29
2000$ 0.25
Tape & Reel (TR) 5000$ 0.24
10000$ 0.22
25000$ 0.22
NewarkEach (Supplied on Cut Tape) 1$ 0.75
10$ 0.52
25$ 0.47
50$ 0.42
100$ 0.37
250$ 0.33
500$ 0.30
1000$ 0.26

Description

General part information

BSZ180 Series

These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources