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STB45N40DM2AG

STB45N40DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 400 V, 0.063 OHM TYP., 38 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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STB45N40DM2AG

STB45N40DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 400 V, 0.063 OHM TYP., 38 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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Description

General part information

STB45N40DM2AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB45N40DM2AG
Current - Continuous Drain (Id) (Tc)38 A
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)56 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2600 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)250 W
QualificationAEC-Q101
Rds On (Max)72 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)5 V

Pricing

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CAD

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