BAS 16 B5003

Obsolete

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23

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Obsolete

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BAS 16 B5003

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-SOT23
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
Infineon Technologies BAS 16-02V E6327	PG-SC79-2	4 ns	Surface Mount	Any Speed	200 mA	80 V	150 °C	Standard	SC-79 SOD-523	1.25 V	2 pF	200 mA	1 µA
Infineon Technologies BAS 16 B5003	PG-SOT23	4 ns	Surface Mount		200 mA 500 ns	80 V	150 °C	Standard	SC-59 SOT-23-3 TO-236-3	1.25 V	2 pF	250 mA	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 250mA Surface Mount PG-SOT23

Technical documentation and resources