IDH05G120C5XKSA1
ActiveTHE IDH05G120C5 IS A 1200 V SILICION CARBIDE SCHOTTKY DIODE IN TO-220 REAL2PIN PACKAGE
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IDH05G120C5XKSA1
ActiveTHE IDH05G120C5 IS A 1200 V SILICION CARBIDE SCHOTTKY DIODE IN TO-220 REAL2PIN PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDH05G120C5XKSA1 |
|---|---|
| Capacitance @ Vr, F | 301 pF |
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage @ Vr | 33 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO220-2-1 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
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Description
General part information
IDH05G120 Series
TheCoolSiC™ Schottky diodegeneration 5 1200 V, 5 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Documents
Technical documentation and resources