MT46V64M8P-5B:J

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Micron Technology Inc.

DDR DRAM, 64MX8, 0.7NS, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

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MT46V64M8P-5B:J

Active

Micron Technology Inc.

DDR DRAM, 64MX8, 0.7NS, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT46V64M8P-5B:J

Access Time	700 ps
Clock Frequency	200 MHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	64 M
Memory Size	64 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	66-TSSOP
Package / Case [custom]	0.4 in
Package / Case [custom]	0.4 in
Supplier Device Package	66-TSOP
Voltage - Supply [Max]	2.7 V
Voltage - Supply [Min]	2.5 V
Write Cycle Time - Word, Page	15 ns

MT46V64M8 Series

Part	Package / Case	Memory Type	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Format	Mounting Type	Access Time	Clock Frequency	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Memory Size	Memory Interface	Package / Case [custom]	Package / Case [custom]
Micron Technology Inc. MT46V64M8BN-6:F	60-TFBGA	Volatile	64 M	2.7 V	2.3 V	DRAM	Surface Mount	700 ps	167 MHz	15 ns	70 °C	0 °C	12.5	60-FBGA	10	64 MB	Parallel
Micron Technology Inc. MT46V64M8P-5B:F TR	66-TSSOP	Volatile	64 M	2.7 V	2.5 V	DRAM	Surface Mount	700 ps	200 MHz	15 ns	70 °C	0 °C		66-TSOP		64 MB	Parallel	0.4 in	0.4 in
Micron Technology Inc. MT46V64M8P-5B L IT:J TR	66-TSSOP	Volatile	64 M	2.7 V	2.5 V	DRAM	Surface Mount	700 ps	200 MHz	15 ns	85 °C	-40 °C		66-TSOP		64 MB	Parallel	0.4 in	0.4 in
Micron Technology Inc. MT46V64M8P-75 IT:D	66-TSSOP	Volatile	64 M	2.7 V	2.3 V	DRAM	Surface Mount	750 ps	133 MHz	15 ns	85 °C	-40 °C		66-TSOP		64 MB	Parallel	0.4 in	0.4 in
Micron Technology Inc. MT46V64M8BN-75:D TR	60-TFBGA	Volatile	64 M	2.7 V	2.3 V	DRAM	Surface Mount	750 ps	133 MHz	15 ns	70 °C	0 °C	12.5	60-FBGA	10	64 MB	Parallel
Micron Technology Inc. MT46V64M8P-5B IT:J TR	66-TSSOP	Volatile	64 M	2.7 V	2.5 V	DRAM	Surface Mount	700 ps	200 MHz	15 ns	85 °C	-40 °C		66-TSOP		64 MB	Parallel	0.4 in	0.4 in
Micron Technology Inc. MT46V64M8P-5B:J TR	66-TSSOP	Volatile	64 M	2.7 V	2.5 V	DRAM	Surface Mount	700 ps	200 MHz	15 ns	70 °C	0 °C		66-TSOP		64 MB	Parallel	0.4 in	0.4 in
Micron Technology Inc. MT46V64M8FN-6:F TR	60-TFBGA	Volatile	64 M	2.7 V	2.3 V	DRAM	Surface Mount	700 ps	167 MHz	15 ns	70 °C	0 °C	12.5	60-FBGA	10	64 MB	Parallel
Micron Technology Inc. MT46V64M8T67A3WC1	Die	Volatile	64 M	2.7 V	2.3 V	DRAM				15 ns	85 °C	-40 °C		Die		64 MB	Parallel
Micron Technology Inc. MT46V64M8P-5B:J	66-TSSOP	Volatile	64 M	2.7 V	2.5 V	DRAM	Surface Mount	700 ps	200 MHz	15 ns	70 °C	0 °C		66-TSOP		64 MB	Parallel	0.4 in	0.4 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 6.01
		10	$ 5.48
		25	$ 5.38
		40	$ 5.34
		80	$ 4.79
		230	$ 4.77
		440	$ 4.47
		1080	$ 4.28

Description

General part information

MT46V64M8 Series

MT46V64M8P-5B:J is a double data rate (DDR) SDRAM. It uses a double data rate architecture to achieve high-speed operation. This double data rate architecture is essentially for 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the memory consists of a single 2n-bit-wide, one-clock cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. It has an internal, pipelined double-data-rate (DDR) architecture with two data accesses per clock cycle.

Documents

Technical documentation and resources

No documents available