2N5415S
ActiveMicrochip Technology
TRANS GP BJT PNP 200V 1A 750MW 3-PIN TO-39 BAG
2N5415S
ActiveMicrochip Technology
TRANS GP BJT PNP 200V 1A 750MW 3-PIN TO-39 BAG
Description
General part information
2N5415 Series
This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5415S |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 1 mA |
| DC Current Gain (hFE) (Min) | 30 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 |
| Power - Max | 750 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
Pricing
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