BSC110N15NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 11 MOHM;

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BSC110N15NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 11 MOHM;

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DocumentsApplication Note EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC110N15NS5ATMA1

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	PG-TDSON-8-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.6 V

BSC110 Series

Part	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies BSC110N06NS3GATMA1	8-PowerTDFN	11 mOhm	2700 pF	20 V	PG-TDSON-8-5	Surface Mount	-55 °C	150 °C	50 A	4 V	10 V	2.5 W 50 W	60 V	N-Channel	MOSFET (Metal Oxide)
Infineon Technologies BSC110N15NS5ATMA1	8-PowerTDFN	11 mOhm	2770 pF	20 V	PG-TDSON-8-7	Surface Mount	-55 °C	150 °C	76 A	4.6 V	8 V 10 V	125 W	150 V	N-Channel	MOSFET (Metal Oxide)	35 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.86
		10	$ 2.53
		100	$ 1.78
		500	$ 1.46
		1000	$ 1.35
		2000	$ 1.33
	Digi-Reel®	1	$ 3.86
		10	$ 2.53
		100	$ 1.78
		500	$ 1.46
		1000	$ 1.35
		2000	$ 1.33
	Tape & Reel (TR)	5000	$ 1.33

Description

General part information

BSC110 Series

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on)(up to 25 percent compared to the next best alternative in SuperSO8) and Qrrwithout compromising FOMgdand FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Qrr= 26 nC in SuperSO8) increases commutation ruggedness.

Documents

Technical documentation and resources

Application Note EN

Datasheet