TSM15N50CI C0G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 500V 14A ITO220AB

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Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 500V 14A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	TSM15N50CI C0G

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	2263 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Rds On (Max) @ Id, Vgs	440 mOhm
Supplier Device Package	ITO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package
Taiwan Semiconductor Corporation TSM15N50CZ C0G	MOSFET (Metal Oxide)	10 V	Through Hole	150 °C	TO-220-3	2263 pF	39 nC	500 V	14 A	N-Channel	440 mOhm	30 V	4 V	TO-220
Taiwan Semiconductor Corporation TSM15N50CI C0G	MOSFET (Metal Oxide)	10 V	Through Hole	150 °C	TO-220-3 Full Pack Isolated Tab	2263 pF	39 nC	500 V	14 A	N-Channel	440 mOhm	30 V	4 V	ITO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 14A (Tc) Through Hole ITO-220AB

Technical documentation and resources

No documents available