IXXH80N65B4H1

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IXYS

IGBT PT 650V 160A TO247AD

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IXYS

IGBT PT 650V 160A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXXH80N65B4H1

Current - Collector (Ic) (Max) [Max]	160 A
Current - Collector Pulsed (Icm)	430 A
Gate Charge	120 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	625 W
Reverse Recovery Time (trr)	150 ns
Supplier Device Package	IXXH
Supplier Device Package	TO-247AD
Switching Energy	3.77 mJ, 1.2 mJ
Td (on/off) @ 25°C	120 ns, 38 ns
Test Condition	400 V, 80 A, 15 V, 3 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Switching Energy	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	IGBT Type	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Test Condition	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Gate Charge	Reverse Recovery Time (trr)
IXYS IXXH80N65B4	1.2 mJ 3.77 mJ	Through Hole	430 A	IXXH	TO-247AD	-55 °C	175 ░C	160 A	PT	TO-247-3	625 W	650 V	3 Ohm 15 V 80 A 400 V	38 ns 120 ns	2 V	120 nC
IXYS IXXH80N65B4H1	1.2 mJ 3.77 mJ	Through Hole	430 A	IXXH	TO-247AD	-55 °C	175 ░C	160 A	PT	TO-247-3	625 W	650 V	3 Ohm 15 V 80 A 400 V	38 ns 120 ns	2 V	120 nC	150 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 650 V 160 A 625 W Through Hole TO-247AD (IXXH)

Technical documentation and resources

No documents available