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STP5NK50Z - TO-220-3

STP5NK50Z

Active
STMicroelectronics

N-CHANNEL 500 V, 1.22 OHM TYP., 4.4 A SUPERMESH POWER MOSFET IN TO-220 PACKAGE

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DocumentsDatasheet+17
STP5NK50Z - TO-220-3

STP5NK50Z

Active
STMicroelectronics

N-CHANNEL 500 V, 1.22 OHM TYP., 4.4 A SUPERMESH POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP5NK50Z
Current - Continuous Drain (Id) @ 25°C4.4 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]28 nC
Input Capacitance (Ciss) (Max) @ Vds535 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)70 W
Rds On (Max) @ Id, Vgs1.5 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.09
50$ 0.87
100$ 0.72
500$ 0.65

Description

General part information

STP5NK50Z Series

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.