IRF6726MTRPBF

Obsolete

Infineon Technologies

TRANS MOSFET N-CH SI 30V 32A 7-PIN DIRECT-FET MT T/R

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH SI 30V 32A 7-PIN DIRECT-FET MT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6726MTRPBF

Current - Continuous Drain (Id) @ 25°C	180 A, 32 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	77 nC
Input Capacitance (Ciss) (Max) @ Vds	6140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MT
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	DIRECTFET™ MT
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRF6726MTRPBF	1.7 mOhm	32 A 180 A	N-Channel	2.35 V	30 V	150 °C	-40 °C	4.5 V 10 V	20 V	DIRECTFET™ MT	MOSFET (Metal Oxide)	6140 pF	DirectFET™ Isometric MT	2.8 W 89 W	Surface Mount	77 nC
Infineon Technologies IRF6726MTRPBF	1.7 mOhm	32 A 180 A	N-Channel	2.35 V	30 V	150 °C	-40 °C	4.5 V 10 V	20 V	DIRECTFET™ MT	MOSFET (Metal Oxide)	6140 pF	DirectFET™ Isometric MT	2.8 W 89 W	Surface Mount	77 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

Technical documentation and resources