TSM260P02CX6 RFG

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Taiwan Semiconductor Corporation

TRANS MOSFET P-CH 20V 6.5A 6-PIN SOT-26 T/R

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Taiwan Semiconductor Corporation

TRANS MOSFET P-CH 20V 6.5A 6-PIN SOT-26 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	TSM260P02CX6 RFG

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.56 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type
Taiwan Semiconductor Corporation TSM260P02CX6 RFG	1.56 W	1.8 V 4.5 V	SOT-23-6	SOT-26	26 mOhm	P-Channel	6.5 A	20 V	19.5 nC	1670 pF	1 V	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-26

Technical documentation and resources