BSC094N06LS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 13.4 MOHM;

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BSC094N06LS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 13.4 MOHM;

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Technical Specifications

Parameters and characteristics for this part

Specification	BSC094N06LS5ATMA1

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	PG-TDSON-8-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

BSC094 Series

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies BSC094N06LS5ATMA1	47 A	60 V	N-Channel	MOSFET (Metal Oxide)	PG-TDSON-8-6	4.5 V 10 V	Surface Mount	2.3 V	8-PowerTDFN	9.4 mOhm	20 V	-55 °C	150 °C	9.4 nC	36 W	1300 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.74
		10	$ 1.11
		100	$ 0.74
		500	$ 0.59
		1000	$ 0.54
		2000	$ 0.50
	Digi-Reel®	1	$ 1.74
		10	$ 1.11
		100	$ 0.74
		500	$ 0.59
		1000	$ 0.54
		2000	$ 0.50
	Tape & Reel (TR)	5000	$ 0.45
		10000	$ 0.45
Newark	Each (Supplied on Full Reel)	5000	$ 0.46

Description

General part information

BSC094 Series

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Documents

Technical documentation and resources