IXFH17N80Q

Obsolete

IXYS

MOSFET N-CH 800V 17A TO247AD

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Obsolete

IXYS

MOSFET N-CH 800V 17A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH17N80Q

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type
IXYS IXFH17N80Q	17 A	800 V	10 V	400 W	3600 pF	600 mOhm	4.5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-247AD (IXFH)	20 V	Through Hole	95 nC	TO-247-3	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 17A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available