IPB065N10N3GATMA1

Obsolete

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 6.5 MOHM;

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IPB065N10N3GATMA1

Obsolete

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 6.5 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB065N10N3GATMA1

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	4910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPB065 Series

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type
Infineon Technologies IPB065N10N3GATMA1	MOSFET (Metal Oxide)	4910 pF	20 V	6 V 10 V	100 V	150 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	64 nC	3.5 V	6.5 mOhm	N-Channel	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB065 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources