STP30N20

Obsolete

STMicroelectronics

MOSFET N-CH 200V 30A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 200V 30A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP30N20

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1597 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STP30NM60N	600 V	91 nC	N-Channel	TO-220	10 V	190 W	Through Hole	2700 pF	150 °C	30 V	25 A	MOSFET (Metal Oxide)	130 mOhm	4 V	TO-220-3
STMicroelectronics STP30N20	200 V		N-Channel	TO-220			Through Hole				30 A	MOSFET (Metal Oxide)		4 V	TO-220-3	75 mOhm	125 W	38 nC	-55 °C	150 °C	1597 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 30A (Tc) 125W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available