IXD611S1

Obsolete

IXYS

IC GATE DRVR HALF-BRIDGE 8SOIC

Search across all available documentation for this part.

Obsolete

IXYS

IC GATE DRVR HALF-BRIDGE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IXD611S1

Channel Type	Independent
Current - Peak Output (Source, Sink)	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.4 V, 2.7 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	18 ns
Rise / Fall Time (Typ) [custom]	28 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	35 V
Voltage - Supply [Min]	10 VDC

Part	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Package / Case	Package / Case	Logic Voltage - VIL, VIH	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Driven Configuration	Current - Peak Output (Source, Sink)	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Supplier Device Package	Gate Type	Number of Drivers	Package / Case [y]	Package / Case [x]
IXYS IXD611P1	150 °C	-40 °C	10 VDC	35 V	0.3 in	8-DIP	7.62 mm	2.4 V 2.7 V	Independent	18 ns	28 ns	Non-Inverting	Half-Bridge	600 mA	600 V	Through Hole	8-DIP	IGBT N-Channel MOSFET	2
IXYS IXD611S1	150 °C	-40 °C	10 VDC	35 V		8-SOIC		2.4 V 2.7 V	Independent	18 ns	28 ns	Non-Inverting	Half-Bridge	600 mA	600 V	Surface Mount	8-SOIC	IGBT N-Channel MOSFET	2	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources

No documents available