DXTP07040CFGQ-7

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR,

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	DXTP07040CFGQ-7

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300 hFE
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	900 mW
Qualification	AEC-Q101
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP, 40V, 3A, PowerDI3333-8

Part	Vce Saturation (Max) @ Ib, Ic [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Mounting Type	Supplier Device Package	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Qualification	Package / Case
Diodes Inc DXTP07040CFGQ-7	500 mV	300 hFE	PNP	3 A	-55 °C	175 ░C	900 mW	Surface Mount Wettable Flank	PowerDI3333-8 (SWP) Type UX	Automotive	40 V	20 nA	100 MHz	AEC-Q101	8-PowerVDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8

Technical documentation and resources