TQM025NB04CR RLG

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Taiwan Semiconductor Corporation

MOSFET, N-CH, 40V, 157A, PDFN56 ROHS COMPLIANT: YES

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Active

Taiwan Semiconductor Corporation

MOSFET, N-CH, 40V, 157A, PDFN56 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TQM025NB04CR RLG

Current - Continuous Drain (Id) @ 25°C	157 A, 24 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6670 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W, 136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Qualification	Grade	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TQM025NB04CR RLG	Surface Mount Wettable Flank	MOSFET (Metal Oxide)	118 nC	3.8 V	N-Channel	8-PDFNU (5x6)	24 A 157 A	40 V	-55 °C	175 ░C	20 V	AEC-Q101	Automotive	2.5 mOhm	3.1 W 136 W	8-PowerTDFN	6670 pF

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General part information

N-Channel 40 V 24A (Ta), 157A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount, Wettable Flank 8-PDFNU (5x6)

Technical documentation and resources