BCP5516H6327XTSA1

Infineon Technologies

TRANS NPN 60V 1A SOT223-4

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Infineon Technologies

TRANS NPN 60V 1A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BCP5516H6327XTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT223-4-10
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Supplier Device Package	Operating Temperature	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
Infineon Technologies BCP5516H6327XTSA1	PG-SOT223-4-10	150 °C	NPN	TO-261-4 TO-261AA	60 V	2 W	500 mV	1 A	Surface Mount	100 nA	100	100 MHz
Infineon Technologies BCP55E6327HTSA1	PG-SOT223-4-10	150 °C	NPN	TO-261-4 TO-261AA	60 V	2 W	500 mV	1 A	Surface Mount	100 nA	40	100 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 2 W Surface Mount PG-SOT223-4-10

Technical documentation and resources