Zenode.ai Logo
SOT1118

PMCPB5530X,115

Active
Nexperia USA Inc.

20 V, COMPLEMENTARY TRENCH MOSFET

Find alt
SOT1118

PMCPB5530X,115

Active
Nexperia USA Inc.

20 V, COMPLEMENTARY TRENCH MOSFET

Find alt

Description

General part information

PMCPB5530X Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPMCPB5530X,115
ConfigurationN, P-Channel
Current - Continuous Drain (Id) (Ta)4 A
Current - Continuous Drain (Id) (Ta) (2)3.4 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Max)21.7 nC
Input Capacitance (Ciss) (Max)660 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UFDFN Exposed Pad
Package Length2 mm
Package Name6-HUSON
Package Width2 mm
Power - Max490 mW
Rds On (Max)34 mOhm
Vgs(th) (Max)900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part