TSM8588CS RLG

Active

Taiwan Semiconductor Corporation

TRANS MOSFET N/P-CH 60V 5A/4A 8-PIN SOP T/R

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

TRANS MOSFET N/P-CH 60V 5A/4A 8-PIN SOP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	TSM8588CS RLG

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	2 A, 2.5 A, 4 A, 5 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	9 nC
Gate Charge (Qg) (Max) @ Vgs	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds	436 pF
Input Capacitance (Ciss) (Max) @ Vds	527 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	5.7 W, 1.4 W
Rds On (Max) @ Id, Vgs	103 mOhm, 180 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power - Max	Technology	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM8588CS RLG	103 mOhm 180 mOhm	2.5 V	8-SOIC	3.9 mm	0.154 in	N and P-Channel Complementary	2 A 2.5 A 4 A 5 A	Surface Mount	1.4 W 5.7 W	MOSFET (Metal Oxide)	436 pF	527 pF	8-SOP	9 nC	9.4 nC	-55 °C	150 °C	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc) 1.4W (Ta), 5.7W (Tc) Surface Mount 8-SOP

Technical documentation and resources