TLP626(MAT-LF2,F)

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

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Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Technical Specifications

Parameters and characteristics for this part

Specification	TLP626(MAT-LF2,F)

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	1200 %
Current Transfer Ratio (Min) [Min]	100 %
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP
Rise / Fall Time (Typ) [custom]	8 µs
Rise / Fall Time (Typ) [custom]	8 µs
Supplier Device Package	4-DIP
Turn On / Turn Off Time (Typ)	8 µs, 10 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V
Voltage - Output (Max) [Max]	55 V

Part	Voltage - Forward (Vf) (Typ)	Turn On / Turn Off Time (Typ)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output / Channel	Current Transfer Ratio (Min) [Min]	Vce Saturation (Max) [Max]	Mounting Type	Current Transfer Ratio (Max)	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Output Type	Number of Channels	Current - DC Forward (If) (Max) [Max]	Voltage - Output (Max) [Max]	Package / Case	Supplier Device Package	Package / Case	Package / Case	Current - DC Forward (If) (Max)
Toshiba Semiconductor and Storage TLP626(D4-LF2,F)	1.15 V	8 µs 10 µs	100 °C	-55 °C	50 mA	100 %	400 mV	Through Hole	1200 %	8 µs	8 µs	1.81 mOhm	1	60 mA	55 V	4-DIP	4-DIP
Toshiba Semiconductor and Storage TLP626(FANUC,F)	1.15 V	8 µs 10 µs	100 °C	-55 °C	50 mA	100 %	400 mV	Through Hole	1200 %	8 µs	8 µs	1.81 mOhm	1	60 mA	55 V	4-DIP (0.300" 7.62mm)	4-DIP
Toshiba Semiconductor and Storage TLP626(LF5,F)	1.15 V	8 µs 10 µs	100 °C	-55 °C	50 mA	100 %	400 mV	Through Hole	1200 %	8 µs	8 µs	1.81 mOhm	1	60 mA	55 V	4-DIP (0.300" 7.62mm)	4-DIP
Toshiba Semiconductor and Storage TLP626(MAT-LF2,F)	1.15 V	8 µs 10 µs	100 °C	-55 °C	50 mA	100 %	400 mV	Through Hole	1200 %	8 µs	8 µs	1.81 mOhm	1	60 mA	55 V	4-DIP	4-DIP
Toshiba Semiconductor and Storage TLP626(BV-LF2,F)	1.15 V	8 µs 10 µs	100 °C	-55 °C	50 mA	200 %	400 mV	Through Hole	1200 %	8 µs	8 µs	1.81 mOhm	1	60 mA	55 V	4-DIP	4-DIP
Toshiba Semiconductor and Storage TLP626-4(HITOMK,F)	1.15 V	8 µs 10 µs	100 °C	-55 °C	50 mA	100 %	400 mV	Through Hole	1200 %	8 µs	8 µs	1.81 mOhm	4		55 V	16-DIP	16-DIP	0.3 in	7.62 mm	50 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP

Technical documentation and resources

No documents available