
DMT35M4LFVW-7
ActiveDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT35M4LFVW-7
ActiveDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT35M4LFVW-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A, 60 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 982 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) @ Id, Vgs | 6 mOhm |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 0.18 | |
| 6000 | $ 0.18 | |||
| 10000 | $ 0.16 | |||
| 50000 | $ 0.16 | |||
Description
General part information
DMT35M4LFDF Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources