IPB039N10N3GE8187ATMA1

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 100V 160A 7-PIN(6+TAB) D2PAK

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH 100V 160A 7-PIN(6+TAB) D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB039N10N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	FET Type	Technology	Package / Case	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)
Infineon Technologies IPB039N10N3GE8187ATMA1	100 V	N-Channel	MOSFET (Metal Oxide)	D2PAK TO-263-7	Surface Mount	214 W	PG-TO263-7	160 A	117 nC	-55 °C	175 ░C	3.5 V	6 V 10 V	3.9 mOhm	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources