IPP70N10S3L12AKSA1

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Infineon Technologies

TRANS MOSFET N-CH 100V 70A 3-PIN(3+TAB) TO-220 TUBE AUTOMOTIVE AEC-Q101

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Infineon Technologies

TRANS MOSFET N-CH 100V 70A 3-PIN(3+TAB) TO-220 TUBE AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	IPP70N10S3L12AKSA1

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	5550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	12.1 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
Infineon Technologies IPP70N10S3L12AKSA1	20 V	70 A	100 V	TO-220-3	125 W	N-Channel	5550 pF	-55 °C	175 ░C	PG-TO220-3-1	12.1 mOhm	2.4 V	4.5 V 10 V	MOSFET (Metal Oxide)	80 nC	Through Hole

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General part information

N-Channel 100 V 70A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

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