IXTH3N200P3HV

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IXYS

MOSFET N-CH 2000V 3A TO247

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IXYS

MOSFET N-CH 2000V 3A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH3N200P3HV

Current - Continuous Drain (Id) @ 25°C	3 A
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	1860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTH3N200P3HV	10 V	TO-247-3	520 W	Through Hole	70 nC	1860 pF	TO-247 (IXTH)	5 V	20 V	N-Channel	8 Ohm	MOSFET (Metal Oxide)	3 A	-55 °C	150 °C

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General part information

N-Channel 2000 V 3A (Tc) 520W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

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