Technical Specifications
Parameters and characteristics for this part
| Specification | STW4N150 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 1500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 50 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Rds On (Max) @ Id, Vgs | 7 Ohm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.40 | |
| 30 | $ 5.11 | |||
| 120 | $ 4.57 | |||
| 510 | $ 4.04 | |||
| 1020 | $ 3.63 | |||
| 2010 | $ 3.40 | |||
Description
General part information
STW4N150 Series
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics.
Documents
Technical documentation and resources
Flyers
AN2344
Application NotesFlyers
TN1156
Technical Notes & ArticlesTN1378
Technical Notes & ArticlesAN4250
Application NotesUM1575
User ManualsFlyers
DS4257
Product SpecificationsFlyers