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STW33N60M2 - TO-247-3 HiP

STW33N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-247 PACKAGE

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Search across all available documentation for this part.

DocumentsAN4337+27
STW33N60M2 - TO-247-3 HiP

STW33N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsAN4337+27

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW33N60M2
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45.5 nC
Input Capacitance (Ciss) (Max) @ Vds1781 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]190 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.97
30$ 3.94
120$ 3.38
510$ 3.00
1020$ 2.57
2010$ 2.42
NewarkEach 1$ 7.28
10$ 5.99
25$ 4.70
50$ 4.42
100$ 4.13
250$ 3.72

Description

General part information

STW33N60M2 Series

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.