IRD3CH53DB6

Obsolete

Infineon Technologies

DIODE GEN PURP 1.2KV 100A DIE

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Obsolete

Infineon Technologies

DIODE GEN PURP 1.2KV 100A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	IRD3CH53DB6

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Reverse Recovery Time (trr)	270 ns
Speed	200 mA, 500 ns
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.7 V

Part	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Technology	Current - Average Rectified (Io)	Reverse Recovery Time (trr)
Infineon Technologies IRD3CH53DB6	Die	Die	20 µA	1.2 kV	2.7 V	Surface Mount	150 °C	-40 °C	200 mA 500 ns	Standard	100 A	270 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 100A Surface Mount Die

Technical documentation and resources

No documents available