JANKCA2N3637
ActivePNP SILICON AMPLIFIER -140V, -1A
JANKCA2N3637
ActivePNP SILICON AMPLIFIER -140V, -1A
Description
General part information
JANKCA2N3637-Transistor-Die Series
This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).
Technical Specifications
Parameters and characteristics for this part
| Specification | JANKCA2N3637 |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 (TO-205AD) |
| Power - Max | 1 VA |
| Qualification | MIL-PRF-19500, 357 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
Pricing
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