IMW120R350M1HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 4.7 A, 1.2 KV, 0.35 OHM, TO-247

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IMW120R350M1HXKSA1

Active

Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 4.7 A, 1.2 KV, 0.35 OHM, TO-247

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMW120R350M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.3 nC
Input Capacitance (Ciss) (Max) @ Vds	182 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	455 mOhm
Supplier Device Package	PG-TO247-3-41
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.7 V

IMW120 Series

Part	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]
Infineon Technologies IMW120R060M1HXKSA1	N-Channel	5.7 V	15 V 18 V	150 W	1060 pF	TO-247-3	PG-TO247-3-41	-55 °C	175 ░C	36 A	Through Hole	31 nC	78 mOhm	-7 V 23 V	1200 V
Infineon Technologies IMW120R045M1XKSA1	N-Channel	5.7 V	15 V		1900 pF	TO-247-3	PG-TO247-3-41	-55 °C	175 ░C	52 A	Through Hole		59 mOhm		1200 V	228 W	52 nC	20 V	-10 V
Infineon Technologies IMW120R350M1HXKSA1	N-Channel	5.7 V	15 V 18 V	60 W	182 pF	TO-247-3	PG-TO247-3-41	-55 °C	175 ░C	4.7 A	Through Hole		455 mOhm	-7 V 23 V	1200 V		5.3 nC
Infineon Technologies IMW120R030M1HXKSA1	N-Channel	5.7 V	15 V 18 V		2120 pF	TO-247-3	PG-TO247-3-41	-55 °C	175 ░C	56 A	Through Hole		40 mOhm	-7 V 23 V	1200 V	227 W	63 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.37
		10	$ 3.64
		100	$ 3.19
Newark	Each	1	$ 6.49
		10	$ 5.80
		25	$ 4.73
		50	$ 4.45
		100	$ 4.16
		480	$ 4.15
		720	$ 3.72

Description

General part information

IMW120 Series

TheCoolSiC™1200 V, 350 mΩSiC MOSFETin TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet