FF11MR12W1M1PB11BPSA1

Obsolete

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B-2

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Obsolete

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B-2

Technical Specifications

Parameters and characteristics for this part

Specification	FF11MR12W1M1PB11BPSA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Input Capacitance (Ciss) (Max) @ Vds	7360 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	11.3 mOhm
Supplier Device Package	AG-EASY1B-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id [Max]	5.55 V

Part	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Mounting Type
Infineon Technologies FF11MR12W2M1HPB11BPSA1	1200 V	1.2 kV
Infineon Technologies FF11MR12W1M1PB11BPSA1	1200 V	1.2 kV	7360 pF	2 N-Channel (Dual)	11.3 mOhm	5.55 V	150 °C	-40 °C	100 A	AG-EASY1B-2	Silicon Carbide (SiC)	Module	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 100A (Tj) Chassis Mount AG-EASY1B-2

Technical documentation and resources

No documents available