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BSZ520N15NS3GATMA1 - INFINEON BSZ067N06LS3GATMA1

BSZ520N15NS3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; PQFN 3.3 X 3.3 PACKAGE; 52 MOHM;

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Search across all available documentation for this part.

BSZ520N15NS3GATMA1 - INFINEON BSZ067N06LS3GATMA1

BSZ520N15NS3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; PQFN 3.3 X 3.3 PACKAGE; 52 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ520N15NS3GATMA1
Current - Continuous Drain (Id) @ 25°C21 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds890 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)57 W
Rds On (Max) @ Id, Vgs52 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.17
10$ 1.39
100$ 0.95
500$ 0.75
1000$ 0.69
2000$ 0.64
Digi-Reel® 1$ 2.17
10$ 1.39
100$ 0.95
500$ 0.75
1000$ 0.69
2000$ 0.64
Tape & Reel (TR) 5000$ 0.61
LCSCPiece 1$ 1.10
10$ 0.92
30$ 0.82
100$ 0.70
500$ 0.65
1000$ 0.63
NewarkEach 1$ 1.66
10$ 1.26
100$ 0.94
500$ 0.77
1000$ 0.66
2500$ 0.62

Description

General part information

BSZ520 Series

The BSZ520N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources