DHH55-36N1F

Active

IXYS

DIODE ARRAY GP 1800V 60A I4PAC

Search across all available documentation for this part.

Active

IXYS

DIODE ARRAY GP 1800V 60A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	DHH55-36N1F

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Series Connection
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	i4-Pac™-3
Reverse Recovery Time (trr)	230 ns
Speed	200 mA, 500 ns
Supplier Device Package	i4-PAC™
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1800 V
Voltage - Forward (Vf) (Max) @ If	2.04 V

DIODE ARRAY GP 1800V 60A I4PAC

Part	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Diode Configuration	Current - Reverse Leakage @ Vr	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
IXYS DHH55-36N1F	i4-PAC™	60 A	2.04 V	Through Hole	1 Pair Series Connection	200 µA	200 mA, 500 ns	i4-Pac™-3	1800 V	230 ns	Standard	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Series Connection 1800 V 60A Through Hole i4-Pac™-3

Technical documentation and resources