1N914B,113

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NXP USA Inc.

DIODE GEN PURP 100V 200MA ALF2

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Active

NXP USA Inc.

DIODE GEN PURP 100V 200MA ALF2

Technical Specifications

Parameters and characteristics for this part

Specification	1N914B,113

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	ALF2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 100V 200MA ALF2

Part	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Speed	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Capacitance @ Vr, F
NXP USA Inc. 1N914B,113	ALF2	4 ns	200 mA	5 µA	Through Hole	1 V	175 °C	Any Speed	200 mA	Axial, DO-204AH, DO-35	100 V	Standard	4 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 200mA Through Hole ALF2

Technical documentation and resources