STW40N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.078 OHM TYP., 34 A MDMESH M2 POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsAN4250 AN4829 +26

STW40N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.078 OHM TYP., 34 A MDMESH M2 POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsAN4250 AN4829 +26

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW40N60M2

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW40N95DK5 Series

N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
STMicroelectronics STW40N60M2	250 W	TO-247-3	-55 °C	150 °C	10 V	57 nC	N-Channel	600 V	4 V	25 V	34 A	Through Hole	2500 pF	TO-247-3	MOSFET (Metal Oxide)	88 mOhm
STMicroelectronics STW40N95DK5		TO-247	-55 °C	150 °C	10 V		N-Channel	950 V	5 V	30 V	38 A	Through Hole		TO-247-3	MOSFET (Metal Oxide)	130 mOhm	3480 pF	450 W	100 nC
STMicroelectronics STW40N65M2	250 W	TO-247-3			10 V		N-Channel	650 V	4 V	25 V	32 A	Through Hole		TO-247-3	MOSFET (Metal Oxide)	99 mOhm	2355 pF		56.5 nC	150 °C
STMicroelectronics STW40NF20		TO-247-3	-55 °C	150 °C	10 V		N-Channel	200 V	4 V	20 V		Through Hole		TO-247-3	MOSFET (Metal Oxide)	45 mOhm	2500 pF		75 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 3.05
		30	$ 2.92
		120	$ 2.80
		510	$ 2.69
Digikey	Tube	1	$ 8.18
		10	$ 5.57
		100	$ 4.09
		500	$ 3.50
Newark	Each	1	$ 7.65
		10	$ 5.89
		25	$ 4.21
		50	$ 4.08
		100	$ 3.96
		250	$ 3.87

Description

General part information

STW40N95DK5 Series

These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters.

STW40N60M2

Deep-Dive with AI

STW40N60M2

Deep-Dive with AI

Technical Specifications

STW40N95DK5 Series

Pricing

Description

STW40N95DK5 Series

Documents

AN4250

AN4829

AN2842

AN4406

TN1378

AN4337

TN1225

AN2344

TN1156

AN5318

DS9801

TN1224

AN4742

UM1575

AN4720

Product Change Notice EN

Datasheet

STW40N95DK5 Series