IPP80N06S4L05AKSA1

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 60V 80A AUTOMOTIVE AEC-Q101 3-PIN(3+TAB) TO-220 TUBE

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IPP80N06S4L05AKSA1

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 60V 80A AUTOMOTIVE AEC-Q101 3-PIN(3+TAB) TO-220 TUBE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80N06S4L05AKSA1

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	107 W
Rds On (Max) @ Id, Vgs	5.1 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

IPP80N Series

Part	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPP80N06S2L11AKSA1	20 V	158 W	80 nC	-55 °C	175 ░C	10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	2075 pF	11 mOhm	55 V	PG-TO220-3-1
Infineon Technologies IPP80N06S205AKSA1	20 V		170 nC	-55 °C	175 ░C	10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	5110 pF	5.1 mOhm	55 V	PG-TO220-3-1	4 V	300 W
Infineon Technologies IPP80N06S207AKSA1	20 V			-55 °C	175 ░C	10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	3400 pF	6.6 mOhm	55 V	PG-TO220-3-1	4 V	250 W	110 nC
Infineon Technologies IPP80N06S405AKSA1	20 V	107 W	81 nC	-55 °C	175 ░C	10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	6500 pF	5.7 mOhm	60 V	PG-TO220-3-1	4 V
Infineon Technologies IPP80N06S3-05	20 V			-55 °C	175 ░C	10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	10760 pF	5.4 mOhm	55 V	PG-TO220-3-1	4 V	165 W	240 nC
Infineon Technologies IPP80N06S2L06AKSA2	20 V		150 nC	-55 °C	175 ░C	4.5 V 10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	3800 pF	6.3 mOhm	55 V	PG-TO220-3-1	2 V	250 W
Infineon Technologies IPP80N06S4L07AKSA1	16 V	79 W		-55 °C	175 ░C	4.5 V 10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	5680 pF	6.7 mOhm	60 V	PG-TO220-3-1	2.2 V		75 nC
Infineon Technologies IPP80N06S4L05AKSA1	16 V	107 W		-55 °C	175 ░C	4.5 V 10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel		5.1 mOhm	60 V	PG-TO220-3-1	2.2 V		110 nC	8180 pF
Infineon Technologies IPP80N06S2LH5AKSA1	20 V			-55 °C	175 ░C	4.5 V 10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	5000 pF	5 mOhm	55 V	PG-TO220-3-1	2 V	300 W	190 nC
Infineon Technologies IPP80N06S2H5AKSA1	20 V		155 nC	-55 °C	175 ░C	10 V	Through Hole	MOSFET (Metal Oxide)	TO-220-3	N-Channel	4400 pF		55 V	PG-TO220-3-1	4 V	300 W			5.5 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPP80N Series

N-Channel 60 V 80A (Tc) 107W (Tc) Through Hole PG-TO220-3-1

Documents

Technical documentation and resources