RN1131MFV(TL3,T)
ActiveToshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
Deep-Dive with AI
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RN1131MFV(TL3,T)
ActiveToshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RN1131MFV(TL3,T) |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Power - Max [Max] | 150 mW |
| Resistor - Base (R1) | 100 kOhms |
| Supplier Device Package | VESM |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.18 | |
| 10 | $ 0.11 | |||
| 100 | $ 0.07 | |||
| 500 | $ 0.05 | |||
| 1000 | $ 0.04 | |||
| 2000 | $ 0.04 | |||
| Digi-Reel® | 1 | $ 0.18 | ||
| 10 | $ 0.11 | |||
| 100 | $ 0.07 | |||
| 500 | $ 0.05 | |||
| 1000 | $ 0.04 | |||
| 2000 | $ 0.04 | |||
Description
General part information
RN1131 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Documents
Technical documentation and resources
No documents available