ZXGD3103N8TC
ActiveIC GATE DRVR HI/LOW SIDE 8SO
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ZXGD3103N8TC
ActiveIC GATE DRVR HI/LOW SIDE 8SO
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Technical Specifications
Parameters and characteristics for this part
| Specification | ZXGD3103N8TC |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) | 2.5 A, 6 A |
| Driven Configuration | High-Side, Low-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 450 ns |
| Rise / Fall Time (Typ) [custom] | 21 ns |
| Supplier Device Package | 8-SO |
| Voltage - Supply [Max] | 15 V |
| Voltage - Supply [Min] | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.63 | |
| 10 | $ 1.03 | |||
| 25 | $ 0.87 | |||
| 100 | $ 0.69 | |||
| 250 | $ 0.61 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.51 | |||
| Digi-Reel® | 1 | $ 1.63 | ||
| 10 | $ 1.03 | |||
| 25 | $ 0.87 | |||
| 100 | $ 0.69 | |||
| 250 | $ 0.61 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.51 | |||
| Tape & Reel (TR) | 2500 | $ 0.46 | ||
| 5000 | $ 0.43 | |||
| 7500 | $ 0.42 | |||
| 12500 | $ 0.40 | |||
| 17500 | $ 0.39 | |||
| 25000 | $ 0.38 | |||
Description
General part information
ZXGD3103N8 Series
The ZXGD3103 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current low. The detectors’ output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn off as current decays.
Documents
Technical documentation and resources