ES1D-13-F

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Diodes Inc

DIODE GEN PURP 200V 1A SMA

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Diodes Inc

DIODE GEN PURP 200V 1A SMA

Technical Specifications

Parameters and characteristics for this part

Specification	ES1D-13-F

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	920 mV

NRND = Not Recommended for New Design

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology
Diodes Inc ES1D-LS	200 V	25 ns	DO-214AC SMA	20 pF	150 °C	-55 °C	5 µA	1 A	200 mA 500 ns	Surface Mount	SMA	920 mV	Standard
Diodes Inc ES1D-13-F	200 V	25 ns	DO-214AC SMA	20 pF	150 °C	-55 °C	5 µA	1 A	200 mA 500 ns	Surface Mount	SMA	920 mV	Standard
Diodes Inc ES1D-13	200 V	25 ns	DO-214AC SMA	20 pF	150 °C	-55 °C	5 µA	1 A	200 mA 500 ns	Surface Mount	SMA	920 mV	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources