IRF9395MTR1PBF

Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 14A DIRECTFETMC

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Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 14A DIRECTFETMC

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9395MTR1PBF

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3241 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MC
Power - Max [Max]	2.1 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	DIRECTFET™ MC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id
Infineon Technologies IRF9395MTR1PBF	30 V	MOSFET (Metal Oxide)	64 nC	3241 pF	Logic Level Gate	2 P-Channel	150 °C	-40 °C	DirectFET™ Isometric MC	14 A	7 mOhm	DIRECTFET™ MC	2.1 W	Surface Mount	2.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 14A 2.1W Surface Mount DIRECTFET™ MC

Technical documentation and resources