2PC1815Y,126

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NXP USA Inc.

TRANS NPN 50V 0.15A TO92-3

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Active

NXP USA Inc.

TRANS NPN 50V 0.15A TO92-3

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General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 500 mW Through Hole TO-92-3

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	2PC1815Y,126	2PC18 Series

Current - Collector (Ic) (Max) [Max]	150 mA	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	-	200 hFE
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120	120 - 350
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Power - Max [Max]	500 mW	500 mW
Supplier Device Package	TO-92-3	TO-92-3
Transistor Type	NPN	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V	50 V

TRANS NPN 50V 0.15A TO92-3

Part	Mounting Type	Power - Max [Max]	Supplier Device Package	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce
NXP USA Inc. 2PC1815Y,412	Through Hole	500 mW	TO-92-3	NPN	TO-226-3, TO-92-3	100 nA	150 mA	50 V	120	150 °C
NXP USA Inc. 2PC1815GR,116	Through Hole	500 mW	TO-92-3	NPN	TO-226-3, TO-92-3	100 nA	150 mA	50 V		150 °C	200 hFE
NXP USA Inc. 2PC1815BL,126	Through Hole	500 mW	TO-92-3	NPN	TO-226-3, TO-92-3	100 nA	150 mA	50 V	350 hFE	150 °C
NXP USA Inc. 2PC1815GR,126	Through Hole	500 mW	TO-92-3	NPN	TO-226-3, TO-92-3	100 nA	150 mA	50 V		150 °C	200 hFE
NXP USA Inc. 2PC1815Y,126	Through Hole	500 mW	TO-92-3	NPN	TO-226-3, TO-92-3	100 nA	150 mA	50 V	120	150 °C