F1T6G A1G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A TS-1

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Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	F1T6G A1G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation F1T6G A1G	15 pF	5 µA	Through Hole	500 ns	T-18 Axial	150 °C	-55 °C	Standard	TS-1	200 mA 500 ns	800 V	1 A	1.3 V

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General part information

Diode 800 V 1A Through Hole TS-1

Technical documentation and resources