BUL416T
ActiveSTMicroelectronics
TRANS NPN 800V 6A TO220
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BUL416T
ActiveSTMicroelectronics
TRANS NPN 800V 6A TO220
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | BUL416T | BUL416 Series |
|---|---|---|
| Current - Collector Cutoff (Max) [Max] | 250 µA | 250 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 18 hFE | 12 - 18 |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power - Max [Max] | 110 W | 110 W |
| Supplier Device Package | TO-220 | TO-220 |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V | 1.5 - 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 800 V | 800 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
BUL416 Series
TRANS NPN 800V 6A TO220
| Part | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Operating Temperature | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BUL416 | Through Hole | 12 | 3 V | TO-220-3 | 800 V | NPN | 250 µA | 110 W | 150 °C | TO-220 |
STMicroelectronics BUL416T | Through Hole | 18 hFE | 1.5 V | TO-220-3 | 800 V | NPN | 250 µA | 110 W | 150 °C | TO-220 |
Description
General part information
BUL416 Series
Bipolar (BJT) Transistor NPN 800 V 6 A 110 W Through Hole TO-220
Documents
Technical documentation and resources
No documents available