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BUL416 - TO-220-3

BUL416

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STMicroelectronics

TRANS NPN 800V 6A TO220

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BUL416 - TO-220-3

BUL416

Active
STMicroelectronics

TRANS NPN 800V 6A TO220

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationBUL416BUL416 Series
Current - Collector Cutoff (Max) [Max]250 µA250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1212 - 18
Mounting TypeThrough HoleThrough Hole
Operating Temperature150 °C150 °C
Package / CaseTO-220-3TO-220-3
Power - Max [Max]110 W110 W
Supplier Device PackageTO-220TO-220
Transistor TypeNPNNPN
Vce Saturation (Max) @ Ib, Ic3 V1.5 - 3 V
Voltage - Collector Emitter Breakdown (Max) [Max]800 V800 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

BUL416 Series

TRANS NPN 800V 6A TO220

PartMounting TypeDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Vce Saturation (Max) @ Ib, IcPackage / CaseVoltage - Collector Emitter Breakdown (Max) [Max]Transistor TypeCurrent - Collector Cutoff (Max) [Max]Power - Max [Max]Operating TemperatureSupplier Device Package
STMicroelectronics
BUL416
Through Hole
12
3 V
TO-220-3
800 V
NPN
250 µA
110 W
150 °C
TO-220
STMicroelectronics
BUL416T
Through Hole
18 hFE
1.5 V
TO-220-3
800 V
NPN
250 µA
110 W
150 °C
TO-220

Description

General part information

BUL416 Series

Bipolar (BJT) Transistor NPN 800 V 6 A 110 W Through Hole TO-220

Documents

Technical documentation and resources