
BSC118N10NSGATMA1
ActiveInfineon Technologies
OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 11.8 MOHM;
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BSC118N10NSGATMA1
ActiveInfineon Technologies
OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 11.8 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC118N10NSGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A, 71 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 114 W |
| Rds On (Max) @ Id, Vgs | 11.8 mOhm |
| Supplier Device Package | PG-TDSON-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.17 | |
| 10 | $ 1.39 | |||
| 100 | $ 0.94 | |||
| 500 | $ 0.75 | |||
| 1000 | $ 0.69 | |||
| 2000 | $ 0.64 | |||
| Digi-Reel® | 1 | $ 2.17 | ||
| 10 | $ 1.39 | |||
| 100 | $ 0.94 | |||
| 500 | $ 0.75 | |||
| 1000 | $ 0.69 | |||
| 2000 | $ 0.64 | |||
| Tape & Reel (TR) | 5000 | $ 0.61 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.01 | |
| 10 | $ 1.28 | |||
| 25 | $ 1.14 | |||
| 50 | $ 1.00 | |||
| 100 | $ 0.86 | |||
| 250 | $ 0.77 | |||
| 500 | $ 0.68 | |||
| 1000 | $ 0.63 | |||
Description
General part information
BSC118 Series
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).
Documents
Technical documentation and resources
No documents available