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BSC118N10NSGATMA1 - INFINEON BSC100N10NSFGATMA1

BSC118N10NSGATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 11.8 MOHM;

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BSC118N10NSGATMA1 - INFINEON BSC100N10NSFGATMA1

BSC118N10NSGATMA1

Active
Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 11.8 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC118N10NSGATMA1
Current - Continuous Drain (Id) @ 25°C11 A, 71 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]114 W
Rds On (Max) @ Id, Vgs11.8 mOhm
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.17
10$ 1.39
100$ 0.94
500$ 0.75
1000$ 0.69
2000$ 0.64
Digi-Reel® 1$ 2.17
10$ 1.39
100$ 0.94
500$ 0.75
1000$ 0.69
2000$ 0.64
Tape & Reel (TR) 5000$ 0.61
NewarkEach (Supplied on Cut Tape) 1$ 2.01
10$ 1.28
25$ 1.14
50$ 1.00
100$ 0.86
250$ 0.77
500$ 0.68
1000$ 0.63

Description

General part information

BSC118 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources

No documents available